The photonics revolution at the beginning of the XXI century has its roots in the spectacular development of semiconductor devices based on quantum well (QW) and quantum dot (QD) microstructures that became the enabling force in constructing advanced active photonics devices. In comparison with Si-based electronic integrated-circuit Complementary Metal-Oxide Semiconductor (CMOS) technology, the fabrication of photonic devices has no single-platform integration technology available that would be capable of providing global manufacturing solutions. Consequently, integrated photonic and optoelectronic circuits, which require different bandgap materials, have been traditionally fabricated using various hybrid manufacturing schemes. The fabrication of Monolithically Integrated Photonic Circuits (originating from the same semiconductor wafer) has been less successful and only limited examples of such structures have been demonstrated to date.